Program—Symposium NN | 2. MRS Fall Meeting. NN2. 0: Poster Session IV: Thin- Film and Nanostructure Solar Cell Materials and Devices IVThursday PM, December 3, 2. Hynes, Level 1, Hall B 8: 0. PM - NN2. 0. 0. 1Avenue to Controlling the Stability of Organometallic Perovskite Thin Films. Paul. F. Ndione. 1, Wan- Jian.
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Yin. 1, Suhuai. Wei. Joseph. Berry. 1. NREL, Golden, Colorado, United States. Show Abstract. The hybrid halide perovskites have emerged as a breakthrough in the field of solar energy, demonstrating a viable high performance device platform due to a wide flexibility processing conditions and device architectures. Consequently these materials have a great potential to lead to cost- effective solar energy production.
We have performed a comprehensive structural study, to elucidate chlorine and substrate role on the stability of perovskite films for solar cell applications. Different substrates are used to deposit CH3. NH3. Pb. I3- x. Clx with different concentration of chlorine. Using grazing incidence X- ray diffraction (GIXRD) measurements, we found that the degradation rate of the perovskite that decomposes in Pb. I2, depends on the used deposition substrate as well the concentration of Cl. Through first principles calculations, we propose a mechanism on how chlorine affects the perovskite film properties.
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Furthermore, the power conversion efficiency of the fabricated perovskite planar heterojunction solar cells is investigated and depends on the Cl content in the films. Highest device performance with an efficiency of 1. We will show how these findings could lead to a much more controllable processability of the perovskites, and offer a route to controlling the degradation rate and a more favorable way of producing stable hybrid perovskite films and devices. PM - *NN2. 0. 0. 2Advancement in As Deposited Polycrystalline Silicon Thin- Film on Glass Substrate for Solar Cells Application. Abdul. R. Middya. Silicon Solar, Inc., Fremont, California, United States; 2. Department of Physics, Syracuse University, Syracuse, New York, United States.
Show Abstract. Polycrystalline silicon thin- film is an ideal candidate for application in low cost silicon based solar cells, since polycrystalline silicon has combination of crystalline structure as well as low cost fabrication technique. The main problems of fabricating polycrystalline silicon thin- film solar cells having conversion efficiency higher than 1. GB). Here, we shall talk about two inventions that raise hope for low cost crystalline silicon thin- film solar cells on glass substrate. In first case, we succeeded to grow polycrystalline silicon thin- film at 2.
C lower temperature than normally reported (4. C) in literature. The polycrystalline silicon thin- films were deposited by hot wire chemical vapor deposition (hot- wire CVD) technique. We found advanced form of polycrystalline silicon thin- film where grains are distributed not randomly but along crystallographic plane {(1. The grain size ~ 1 to 2 μm estimated by Scanning Electron Microscopy (SEM).
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The Raman shift at 5. Atomic Force Microscopy (AFM) reveals the exotic structure at the film surface, i. In other words, we found Penrose tiling at the film surface, we got quasicrystalline silicon thin- film. Authors will discuss the quasicrsytalline structure of silicon thin- film deposited at 2. C, in details including quasi- unit cell concept, how it is sensitive to atomic hydrogen flux during film growth. Secondary Ion Mass Spectroscopy (SIMS) analysis reveals that the advanced polycrystalline silicon, we developed contains hydrogen content ~ 1.
It is reported in the literature that hydrogen content in fully polycrystalline silicon is 1 to 2 at%. Higher hydrogen content will act as a defect passivation at the grain boundary (GB), carrier lifetime (t) and solar cells performance is very sensitive to point defects located at grain boundary (GB). Therefore, we found hydrogenated polycrystalline silicon thin- film for solar cells application. We also developed partially ordered polycrystalline silicon thin- film at 4. C substrate temperature by hot- wire CVD technique.
The hydrogen content (FTIR) in these films is in the range 1 to 2 at%. We observed dopant atom boron (B) incorporation profoundly influences the structure, we found very ordered (partially ordered to fully ordered) structure, we got nearly (2. We got carrier mobility (μ) ~ 1. V. s for undoped films. We developed hydrogen passivation scheme by hot- wire CVD, where we observed carrier mobility is improved to 4. V. s. The dark conductivity and Fermi level for these films are 1. S/cm and 0. 4. 5 ± 0.
V respectively. 8: 0. PM - NN2. 0. 0. 3Open Circuit Voltage Improvements in Cu. Zn. Sn(S,Se)4 through High Work Function Back Contacts and Back- Side Device Passivation. Priscilla. Denise. Antunez. 1, Douglas. M. Bishop. 2, Kasra.
Sardashti. 3, Oki. Gunawan. 1, Andrew. C. Kummel. 4, Brian. Mc. Candless. 2, Richard. Haight. 1. 1. , IBM T. J. Watson Research Center, Yorktown Heights, New York, United States; 2. Institute of Energy Conversion, University of Delaware, Newark, Delaware, United States; 3.
Materials Science and Engineering, University of California, San Diego, San Diego, California, United States; 4. Department of Chemistry and Biochemistry, University of California, San Diego, San Diego, California, United States. Show Abstract. Kesterite solar cells based on Cu. Zn. Sn(S,Se)4 absorbers have attracted much interest due to the material's relatively low toxicity and earth abundant elemental composition. The maximum efficiency reached by CZT(S,Se) solar cells is 1. A main component of these limitations can be attributed to bulk defects and band tails, which despite recent efforts in increasing cation ordering, may have limited potential improvements due to thermodynamic boundaries. An alternative avenue for driving up VOC - in spite of bulk properties - is to use electrostatic fields via a high work function back contact to increase separation of electrons and holes, limit back contact recombination, and drive collection of carriers.
We use a facile exfoliation method to remove the active device from the Mo/glass substrate after growth, thereby enabling the deposition of a high work function back contact on the resulting superstrate solar cell structure. The process preserves an optimized hydrazine solution growth procedure responsible for past champion devices. In addition, the exfoliation technique enables the direct characterization and identification of significant recombination at the back half of the absorber that can harm VOC. This recombination was reduced through chemical etching and an optimized oxidative treatment to passivate the back of the exfoliated device.
Carrier lifetimes increased when measured from the back of the film, as well as the front, and translated to improved VOC's by up to 3. V relative to the pre- exfoliated device. Scanning electron microscopy, X- ray photoelectron spectroscopy, nano- Auger, and photoluminescence imaging were used to characterize the exfoliated film in an effort to understand the high carrier recombination at the back and help elucidate the mechanisms for improved passivation. The benefit of a high work function back contact is demonstrated, and the key role of absorber and Mo. O3 thickness are optimized, while minimizing effects on fill factor. PM - NN2. 0. 0. 4Micro- Grid Electrode for Si Microwire Solar Cells with a Fill Factor of over 8. Namwoo. Kim. 1, Kangmin.
Lee. 1, Inchan. Hwang. Han- Don. Um. 1, Young J. Yu. 2, Munib. Wober. Kwanyong. Seo. 1.
UNIST, Ulsan, Korea (the Republic of); 2. Zena Technologies, Topsfield, Massachusetts, United States. Show Abstract. We demonstrate a novel micro- grid top electrode for highly efficient radial- junction Si microwire solar cells.
The micro- grid electrode minimizes optical and electrical losses, thus ensuring proper function of the shallow (sheet resistance of ~1. This leads to effective collection of the photocarriers from the shallow junction emitter through the top electrode without severe Auger/surface recombination, improving the overall power conversion efficiency of the Si microwire solar cell. With an optimized micro- grid structure, our 1 cm.
V and a short- circuit current density of 3. A/cm. 2; this conversion efficiency is 7. Further, an approximately 1- μm- thick Ni electrode that was formed by electroplating considerably reduced the metal and contact resistances, which reproducibly yielded a fill factor of over 8. Thus, the use of a novel micro- grid to construct an ideal metal/emitter interface presents a unique opportunity to develop highly efficient microwire solar cells. PM - NN2. 0. 0. 5Improving the Accuracy of Novel Materials Screening: Growing Defect- Tolerant Photovoltaic Absorbers. Rachel. Chava. Kurchin. Riley. E. Brandt.
Vera. Steinmann. 1, Robert. L. Z. Hoye. 1, James. Serdy. 1, Tonio. Buonassisi. MIT, Cambridge, Massachusetts, United States. Show Abstract. There is an urgent need for efficient photovoltaics based on non- toxic, Earth- abundant materials that can be processed by low- cost, high- throughput methods. Historically, the cycle of learning for discovering new materials has been slow, limited by the need to fabricate and optimize devices.
Recently, we have introduced a computational screening approach to inform and streamline experimental identification of defect- tolerant photovoltaic absorbers.[1]A critical component of this process is the design of a growth system that enables rapid deposition, but also allows films with high structural quality and phase purity to be synthesized. We chose physical vapor transport because it is flexible, allowing a wide variety of materials to be grown, while also being a system that can be maintained with high cleanliness, which is critical for maintaining low impurity contents. To control phase purity and structural- defect densities, important tunable deposition parameters are the spatial temperature profile, heating and cooling rate, and the system pressure.